Project PI : Joel YANG
Project Period : 13 October 2016 to 30 June 2021
To perform a feasibility study for a compact high-power laser at the telecommunication wavelength of 1.00 – 1.55 um up to the several watt level while maintaining a beam that is diffraction limited. E-beam lithography, nano fabrications, electrical microprobing, micro 3D fabrications, optics simulations were deployed. Characterisations and testing of InP, GaAs and Hybrid Si technology will be used to integrate all components onto a solid state chip.
